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 TLME3102
Vishay Telefunken
High Intensity SMD LED
Color Yellow Type TLME3102 Technology AlInGaP on GaAs Angle of Half Intensity o 60
Description
These devices have been designed for applications requiring narrow brightnes selection. The package of the TLME3102 is the P-LCC-2 (equivalent to a size B tantalum capacitor). It consists of a lead frame which is surrounded with a white thermoplast. The reflector inside this package is filled up with clear epoxy.
Features
D SMD LED with exceptional brightness D Luminous intensity categorized D Compatible with automatic placement
equipment
94 8553
D EIA and ICE standard package D Compatible with infrared, vapor phase and
wave solder processes according to CECC
D Available in 8 mm tape D Low profile package D Non-diffused lens: excellent for coupling to light
pipes and backlighting
D Low power consumption D Luminous intensity ratio in one packaging unit
IVmax/IVmin
x 1.6
Applications
Automotive: backlighting in dashboards and switches Telecommunication: indicator and backlighting in telephone and fax Indicator and backlight for audio and video equipment Indicator and backlight in office equipment Flat backlight for LCDs, switches and symbols General use
Document Number 83075 Rev. A1, 04-Feb-99
www.vishay.de * FaxBack +1-408-970-5600 1 (6)
TLME3102
Vishay Telefunken Absolute Maximum Ratings
Tamb = 25_C, unless otherwise specified TLME3102 Parameter Reverse voltage DC forward current Surge forward current Power dissipation Junction temperature Operating temperature range Storage temperature range Soldering temperature Thermal resistance junction/ambient Test Conditions Tamb 60C tp 10 ms Tamb 60C Symbol VR IF IFSM PV Tj Tamb Tstg Tsd RthJA Value 5 30 0.1 80 100 -40 to +100 -55 to +100 260 400 Unit V mA A mW C C C C K/W
t5s mounted on PC board (pad size > 16 mm2)
Optical and Electrical Characteristics
Tamb = 25_C, unless otherwise specified Yellow (TLME3102 ) Parameter Luminous intensity Dominant wavelength Peak wavelength Angle of half intensity Forward voltage Reverse voltage Junction capacitance Test Conditions IF = 10 mA IF = 10 mA IF = 10 mA IF = 10 mA IF = 20 mA IR = 10 mA VR = 0, f = 1 MHz Type Symbol IV ld lp VF VR Cj Min 20 581 Typ 588 590 60 2 15 Max 64 594 Unit mcd nm nm deg V V pF
2.6
5
Typical Characteristics (Tamb = 25_C, unless otherwise specified)
125 PV - Power Dissipation ( mW ) IF - Forward Current ( mA ) 100
95 10894
60 50 40 30 20 10 0 0 20 40 60 80 0 20 40 60 80 100 Tamb - Ambient Temperature ( C ) Tamb - Ambient Temperature ( C )
100
75
50 25 0
95 10887
Figure 1 Power Dissipation vs. Ambient Temperature
Figure 2 Forward Current vs. Ambient Temperature
www.vishay.de * FaxBack +1-408-970-5600 2 (6)
Document Number 83075 Rev. A1, 04-Feb-99
TLME3102
Vishay Telefunken
0 Iv rel - Relative Luminous Intensity 10 20 30 I Vrel- Relative Luminous Intensity 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 1
96 11589
40 1.0 0.9 0.8 0.7 50 60 70 80 0.6 0.4 0.2 0 0.2 0.4 0.6
2 5
5 2
10 1
20 0.5
50 0.2
100 IF(mA) tp/T
95 10319
10
Figure 3 Rel. Luminous Intensity vs. Angular Displacement
100 I Vrel- Relative Luminous Intensity 10.00
Figure 6 Rel. Lumin. Intensity vs. Forw. Current/Duty Cycle
I F - Forward Current ( mA )
1.00
10
0.10
1 1
95 10878
1.5
2.0
2.5
3.0
0.01 1
96 11588
10 IF - Forward Current ( mA )
100
VF - Forward Voltage ( V )
Figure 4 Forward Current vs. Forward Voltage
1.6 I Vrel- Relative Luminous Intensity
Figure 7 Relative Luminous Intensity vs. Forward Current
1.2 IF = 10 mA 1.1 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 550 560 570 580 590 600 610 620 630 640 650
l - Wavelength ( nm )
1.2 1.0 0.8 0.6 0.4 0.2 0 0 10 20 30 40 50 60 70 80 90 100 Tamb - Ambient Temperature ( C )
95 10880
95 10881
Figure 5 Rel. Luminous Intensity vs. Ambient Temperature
Figure 8 Relative Luminous Intensity vs. Wavelength
I Vrel- Relative Luminous Intensity
1.4
IF = 10 mA
Document Number 83075 Rev. A1, 04-Feb-99
www.vishay.de * FaxBack +1-408-970-5600 3 (6)
TLME3102
Vishay Telefunken Dimensions in mm
95 11314
www.vishay.de * FaxBack +1-408-970-5600 4 (6)
Document Number 83075 Rev. A1, 04-Feb-99
TLME3102
Vishay Telefunken PCB Layout in mm
95 10966
Document Number 83075 Rev. A1, 04-Feb-99
www.vishay.de * FaxBack +1-408-970-5600 5 (6)
TLME3102
Vishay Telefunken Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances ( ODSs ). The Montreal Protocol ( 1987 ) and its London Amendments ( 1990 ) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency ( EPA ) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized application, the buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 ( 0 ) 7131 67 2831, Fax number: 49 ( 0 ) 7131 67 2423
www.vishay.de * FaxBack +1-408-970-5600 6 (6)
Document Number 83075 Rev. A1, 04-Feb-99


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